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Session1: Emerging Technologies for 10 and 7nm

• KEYNOTE: Emerging Interconnect Technologies for Nanoelectronics — Prof. Krishna Saraswat, Stanford
  
• Characterization of effective removal of surface contaminants on epitaxial surfaces for silicide contacts – Brown Peethala, IBM
• Tungsten Post-CMP Cleaning Formulations for Advanced Nodes: 10 nm and 7 nm — Daniela White, Entegris
  
• INVITED: 3D architecture and interconnect for emerging memory technologies — Er-Xuan Ping, AMAT
  
• Surface preparation and cleaning for Cobalt interconnects in 7nm and beyond technologies — Brown Peethala, IBM
• Advanced Metal Nitride Select Etch for 7nm FEOL and BEOL Applications — Sherman Hsu, Avantor Materials
• Selective Removal of TiN Metal Hard-Mask at Metal 1 for 48 nm Pitch Structures — Shariq Siddiqui, GLOBALFOUNDRIES

Session 2: Contamination Control

• INVITED: Analytical Toolbox for Technology Enabling and Troubleshooting — Hugh Gotts, Air Liquide
• Comparison of HF and HCl cross-contamination between different ENTEGRIS FOUP platforms and Cu-coated wafers — Fernando Herran, CEA-LETI
• Effect of TMAH cleaning solution for removal of organic particle from Ru surface in EUV mask cleaning — Jin-Goo Park, Hanyang University
• Advanced Contamination Control using Novel Polyarylsulfone Membrane Technology — Patrick Connor, Pall

Session 3: Advanced Etch

• INVITED: Electron beam generated plasmas: Ultra cold sources for low damage, atomic layer processing — Scott Walton, Naval Research Lab
• Selectivity in Atomic Layer Etching Using Sequential, Self-Limiting Thermal Reactions — Steve George, Univ. of CO
• Environmental friendly Fluorine mixture cleaning process to replace C2F6, CF4 and NF3 as cleaning gas — Marcello Riva, Solvay

Session 4: ITRS/SurfacePassivation

• KEYNOTE: ITRS 2.0 – Paolo Gargini, Stanford
• Effect of surface preparation of copper on self- assembly of fullerene molecules — Krishna Muralidharan, Univ. of AZ
• Novel Reactive Chemistry Sources for Surface Passivation of Future Generation Channel Materials — Dan Alvarez, Rasirc
• A Comparison of Sulfur-Based Chemistries to Passivate the (100) Surfaces of SiGe 25% and 75% — Zhonghao Zhang, Univ. of AZ
• Formation of Aqueous Ozonated Water Interfacial Layer (IL) and Functionalization using Trimethylaluminum (TMA) Dosing for Si1-xGex (100) Surfaces — Shariq Siddiqui, GLOBALFOUNDRIES
• High Temperature Water as a Clean and Etch of SiO2 Films — Rick Reidy, Univ. of N. Texas

Session 5

• INVITED: The Impact of the Global Economy on the Semiconductor Outlook — Duncan Meldrum Ph.D., Hilltop Economics LLC
• Novel STI step height uniformity control by wet etch process in 4xnm cmos device — Wendy Ho, Powerchip

Session 6: Contamination Free Manufacturing

• INVITED: Surface inspection and Metrology: Relevance, Challenges and Solutions — Jijen Vazhaeparambil, KLA-Tencor
• Improved cryogenic gas cleaning for nanoparticle removal — Chimaobi Mbanaso, TEL FSI
• Process Gas Ar Flow Usage Reduction in Ar Aerosol Cleaning — Asha Sharma, GLOBALFOUNDRIES

Session 6: Panel Discussion — The Future of Formulated Chemistries

•  Jeff Hemphill, INTEL CORPORATION
• Cuong Tran, Director, Post-CMP Cleans, Entegris
• Gary Dailey Vice President, Global Marketing – Electronic Materials Avantor Performance Materials
• Tianniu Rick Chen, Ph.D. Global Business Marketing Manager, Air Products

• Study of particle attachment on silicon wafers during rinsing — Takeo Fukui, Kurita
• Al Corrosion-free Photoresist Stripping and Etch Residue Removal Process with Diluted Halides Solutions at Room Temperature Condition — Steve Ryu, Avantor Materials
• Finite Element Analysis of CVD Stripping Kinetics for In Silico optimization of Semiconductor Manufacturing Parts for Sub-20 nm Technology Nodes — Ardy Sidhwa, Quantum Global Technologies
• Acoustic Characterization of a Photomask Cleaning System — Manish Keswani, Univ. of AZ
• Advanced Metrology for Post Etch Residue Removal — Eugene Shalyt, ECI Technology
• Rapid Cleaning Using Novel Processes with Coatings — John Moore, Daetec
• Surface Contamination Control through Final Surface Finish Processing for Semiconductor Equipment Parts for Sub-16nm Nodes — Ardy Sidhwa, Quantum Global Technologies
• Static control in Ultrapure DI water application — Eric Gou, SMIC
• Contamination Control of Manufacturing Practices Using Critical Wipers — Victor Chia, Air Liquid
• A Study of Removing Scan Damage on Advanced ArF PSM Mask by Dry Treatment
  before Cleaning — Eric Gou, SMIC
• Post Tungsten CMP Cleaner development for Organic and Particle Residue Improvement on Si3N4 Wafer Surface and Tungsten Compatibility — Ken Chao, Dupont
• SPM Strip of Metal-Oxide PR — Shan Hu, Tokyo Electron
• Effective Clean in 450mm Scrubber Tool for Throughput and Defect Removal Improvement — Chung Ju Yang, Global 450mm Consortium
• A Comparison of Sulfur-Based Chemistries to Passivate the (100) Surfaces of SiGe 25% and 75% — Zhonghao Zhang, Univ. of AZ